10-Gb/s - 120-/spl deg/C operation of 1.3-/spl mu/m AlGaInAs-MQW-FP-LD with Ru-doped InP buried heterostructure

We have developed the first 1.3-mum AlGaInAs-MQW-FP-LD with Ru-doped InP buried heterostructure by narrow-stripe selective MOVPE. SIMS measurements revealed that the Ru-doped InP suppressed Zn diffusion from Zn-doped InP in comparison with Fe-doped InP. The LD operates up to 170degC. 10-Gb/s operation up to 120degC and more than 3500-hour reliability under 85-degC APC test has been successfully achieved