Large Signal Excitation Measurement Techniques for RTS Noise in MOSFETs

This paper introduces large signal excitation measurement techniques to analyze random telegraph signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy observation possible for every bias-situation, including the OFF-state of the transistor