All-MOS Non-floating One-Port Linear Resistors for Spatio-Temporal Retinotopic Processing

The voltage mirroring technique implemented with MOS transistors that exhibits performance of non-floating linear resistive element is presented. It comprises only three MOS transistors: two of them are enhancement type and the third is depletion type MOS transistor. The possibilities of controlling the variable resistance (tunability) are presented and simulation results are given. One substantial implementation of the circuit in all-MOS linear resistive grid for spatial retinotopic processing is outlined.