Evaluation of Secco etch technique for determination of dislocation densities in SIMOX wafers

The authors report on an extensive study of a Secco etch process for determining dislocation densities that was performed by three different groups using nine SIMOX (separation by implanted oxygen) wafers from the same lot. The average dislocation density across the entire current data set (except transmission electron microscopy, TEM) is 2.2*10/sup 6//cm/sup 2/ with a standard deviation of 1.0*10/sup 6//cm/sup 2/. Most of the data points are in the low 10/sup 6/ dislocations/cm/sup 2/ range, in agreement with the TEM results, and indicate good consistency of results from facility to facility.<
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