Hydrogen interactions with SIMOX

Nuclear-reaction profiling was used to examine the reactions of H/sub 2/ with SIMOX (separation by implanted oxygen) structures in the temperature range 500-1000 degrees C, and strong H binding within the buried SiO/sub 2/ layer was observed. These trapping reactions are significant both for their potentially beneficial passivation of electrically active centers and for the indication they provide of defect densities. In separation studies of H in thermal oxides on Si, the authors have quantitatively characterized the interactions of H with Si and O dangling bonds in the SiO/sub 2/ matrix and at the Si-SiO/sub 2/ interface, thereby providing a prediction capability that is believed applicable to SIMOX.<
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