Defect characterization in silicon particle detectors irradiated with Li ions

High Energy Physics experiments at future very high luminosity colliders will require ultra radiation-hard silicon detectors that can withstand fast hadron fluences up to 10/sup 16/ cm/sup -2/. In order to test the detectors radiation hardness in this fluence range, long irradiation times are required at the currently available proton irradiation facilities. Energetic (58 MeV) Lithium (Li) ions, with experimental hardness factor about two orders of magnitude higher than 24 GeV protons for 280-300 /spl mu/m thick detectors, could represent a promising alternative radiation source. In this study, the degradation mechanisms in single pad p/sup +/-n Standard Float Zone (STFZ) and Diffusion Oxygenated Float Zone (DOFZ) Si detectors irradiated with Li ions up to the fluence of 2.9/spl times/10/sup 12/ Li/cm/sup 2/ have been investigated by means of Photo Induced Current Transient Spectroscopy and Thermally Stimulated Currents. Results are compared with the radiation damage induced by 24 GeV proton, 1 MeV neutron and /sup 60/Co /spl gamma/-ray irradiation. The critical Li ion fluence for cluster formation is found to be in the range 4.1-21/spl times/10/sup 11/ Li/cm/sup 2/ and its correlation to the corresponding value for hadrons is discussed.