Abstract:
A simple method is proposed to determine lateral diffusion profiles for MOSFETs. The method compares the gate-to-substrate capacitance for a MOSFET with the gate biased i...Show MoreMetadata
Abstract:
A simple method is proposed to determine lateral diffusion profiles for MOSFETs. The method compares the gate-to-substrate capacitance for a MOSFET with the gate biased in accumulation and the source and drain slightly forward-biased to that for a MOS capacitor with no diffusions. The results can be utilized for optimal design of submicrometer devices and modeling of two-dimensional diffusion.<>
Date of Conference: 18-20 March 1990
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-87942-588-1