An MOS test device with the gate electrode emphasized for dielectric breakdown

A novel test device was fabricated with two MOS structures. The dielectric of the test device has a differential thickness and area which are combined with the same gate electrode. After the two MOS devices were fabricated on the same wafer, they were processed by ion implantation and sputtering. From the results of the measured electrical properties, it was possible to confirm that the dielectric breakdown caused by electrostatic charge-up is affected by an electron shower current in the ion implantation and the RF power in the sputtering. As a result, it was possible to find the effective process conditions for preventing charge-up. Test devices were fabricated that are 20 times more sensitive to dielectric breakdown than conventional MOS devices.<>