A new structure for measuring the thermal conductivity of integrated circuit dielectrics

A novel device is described for measuring thermal conductivities of microelectronic dielectrics. This temperature is measured immediately above and below the dielectric slab, avoiding the need for difficult corrections to the measured temperature. Results are insensitive to photoengraving spreads and to overlying dielectrics. The structure can be used to measure sheet resistances and derive the thermal conductivity or dielectric thickness at the parametric measurement stage of integrated circuit production. The abilities of the structure are illustrated for two of the most difficult to measure dielectrics: the intermetal dielectric and the interpoly dielectric.<>