Extraction of the interfacial generation velocity in MOSFETs

A novel method based upon gate controlled diode static characteristics is proposed to determine the interfacial generation velocity S/sub o/ in MOSFETs. S/sub o/ is deduced from the measurement of the apparent generation velocity of two long transistors with different channel lengths. Results concerning natural or implanted transistors, with single or double diffused drains, are presented and discussed.<>