A low voltage SiGe HBT up-conversion mixer for 5.8 GHz WLAN

A new low voltage doubly balanced mixer topology for 5.8 GHz wireless local area network applications is presented in this paper. To reduce the supply voltage, a single stacked transistor mixer topology is designed with 50 GHz f/sub T/ SiGe HBT process. The designed up-conversion mixer has a conversion gain of 4.2 dB, an OP1 dB of -6 dBm and LO to RF isolation greater than 31 dB while consuming DC power of 13.2 mW under a 1.2 V low supply voltage. The chip size including pads is 0.96 mm /spl times/ 0.92 mm.