High-frequency measurements of the mismatch on the Y-parameters of high-speed SiGe:C HBTs

The performance of analog circuits operating at high frequencies is limited by device mismatch at these frequencies. In this paper, high-frequency measurements of the mismatch on the Y-parameters of bipolar transistors are discussed. After investigation of the impact of the deembedding structures and measurement accuracy, the RF matching behavior of 200 GHz SiGe:C HBTs is characterized over a wide range of frequencies and biasing conditions. The mismatch on the cut-off frequency and small-signal parameters are extracted.