Investigation of lateral charge distribution of 2-bit SONOS memory devices using physically separated twin SONOS structure

The lateral charge distribution on 2-bit SONOS memory can be readily characterized using physically separated twin SONOS structure. The damascene gate and outer sidewall process successfully contribute to make the twin SONOS structure down to 80nm gate regime. Its lateral charge distribution is estimated through the SS and V/sub th/ shifts for forward and reverse reading and confirmed by the comparison with a conventional (non-separated) SONOS structure.