Specific contact resistance measurements of metal-semiconductor junctions

Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific silicide-to-diffusion contact resistance characterization using the known Scott's transmission line model (TLM) and our approach, considering particular geometry, with NiSi and PtSi as the silicides.