A 2.4 GHz Fully Integrated Class-A Power Ampifier In 0.35 μm SiGe BiCMOS Technology

This paper presents a 2.4 GHz fully integrated class-A power amplifier designed and implemented in a commercial 0.35 mum SiGe BiCMOS technology for a single-chip dual-band transceiver. It delivers a power output of 18.5dBm at an input power of -8dBm with a PAE of 17%. The 2nd and 3rd harmonics are -37.5dBc and -32.2dBc, respectively. The power amplifier draws a DC current of 126mA from a 3.3 V supply and achieves a linear gain of 27.6 dB. The fabricated die size is only 1.2 mm times 1 mm. An improved PA model is introduced for optimal power matching analysis that was verified in this design