Detector structures based on epitaxial gallium arsenide compensated by chromium

Detector structures based on VPE GaAs layers, compensated by Cr at diffusion process, have been studied at present article. Detectors were with active region both n-type and /spl pi/-type. It was shown, that at structures based on n-type layers width of space charge region depends on applied reverse bias. And charge collection efficiency from /spl alpha/-particles increased with bias. In structures based on /spl pi/-type layers such dependence is particularly absent and charge collection efficiency is not changed. Both types of structures has high charge collection efficiency from /spl gamma/-irradiation. At applied bias in structures based on n-type layers at the process of charge collection takes part not only electrons but also holes.