Electrical-stress effects and device modeling of 0.18-/spl mu/m RF MOSFETs

In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure (NF/sub min/) of RF MOSFETs. A low NF/sub min/ of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-/spl mu/m MOSFETs, without de-embedding. Using an analytical expression for NF/sub min/, we have developed a self-consistent dc current-voltage, S-parameter, and NF/sub min/ model, where the simulated results match the measured device characteristics well, both before and after electrical stress.