Ion-implanted base SiGe PNP self-aligned SEEW transistors

The feasibility of ion-implanting an intrinsic base into an undoped strained SiGe-layer has been demonstrated by fabricating self-aligned selective epitaxy emitter window (SEEW) PNP transistors with ideal Gummel characteristics. Self-aligned SiGe base PNP transistors have been achieved by ion-implanting and annealing arsenic into undoped, stable SiGe layers. Ideal I-V characteristics were achieved with both Si and SiGe base devices, indicating that the implant damage was successfully annealed out. The results demonstrate the feasibility of fabricating SiGe base structures with a conventional ion-implanted approach.<
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