A novel self-aligned epitaxial base transistor

The authors propose SATURN (self-alignment technology utilizing reserved nitride), a high-speed bipolar LSI technology. An advanced SATURN process, utilizing selective epitaxial technology, has been developed in order to improve the high-speed capability. It makes possible an emitter width of less than 0.4 mu m, a base area width of less than 2 mu m, and a base width of 1500 AA. Furthermore, a base width of 800 AA was realized by collector phosphorus doping using low-energy ion implantation, just before the deposition of base epitaxy.<
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