Novel transition layer engineered Si nanocrystal flash memory with MHSOS structure featuring large V/sub th/ window and fast P/E speed

In this work, we propose a MHSOS (metal gate/high-k/SRO(silicon-rich oxide)/SiO
₂
/Si) structure showing large memory window (> 4V) with fast P/E speed (plusmn18 V, 200 mus). The erase speed is featuring faster than that of Si
₃
N
₄
and has a retention time of 10 years for 10 % charge loss. These excellent properties were obtained through the modification of the transition layer between Si-NC and SiO
₂
matrix in an SRO medium, as well as tunneling/blocking dielectric material optimization