Ultra-fast programming of silicided polysilicon fuses based on new insights in the programming physics

New insights in the programming physics of silicided polysilicon fuses integrated in 90 nm CMOS have led to a programming time of 100 ns, while achieving a resistance increase of 10
⁷
. This is an order of magnitude better than any previously published result for the programming time and resistance increase individually. Simple calculations and TEM-analyses substantiate the proposed programming mechanism. The advantage of a rectangular fuse head over a tapered fuse head is shown and explained