First-principles modeling of double-gate UTSOI MOSFETs

This paper presents a first-principles approach to modeling wavefunction penetration and transport in UTSOI MOSFETs that includes accurate quantum mechanics and atomic-scale structures with no empirical parameters. Applications to interface roughness and to Hf atoms near the Si-SiO/sub 2//HfO/sub 2/ interface in double-gate UTSOI MOSFETs with SiO/sub 2/ or HfO/sub 2/ gate dielectrics are presented.