Dramatic improvement of Ge p-MOSFET characteristics realized by amorphous zr-silicate/ge gate stack with excellent structural stability through process temperatures

Ge diffusion into high-k layer is completely suppressed by taking advantage of thermally stable Zr-silicate/Ge structure. This leads to high mu_h of 210 cm ²/Vsec at 0.1M V/cm, which is two times higher than that of ZrO₂/Ge and even 23% higher than the value for Si universal curve. EOT scalability of Zr-silicate/Ge gate stacks is comparable to that of ZrO₂/Ge one