Process damages in HfO/sub 2//TiN stacks: the key role of H/sup 0/ and H/sub 2/ anneals

Plasma damages have been studied in HfO₂ stacks with metal gate. We demonstrate that some damages generated during the process can be self-cured during T > 475degC anneals used in metallization steps. Moreover, we show that hydrogen plasma at low temperature can be very effective to passivate interface defects although enhanced degradation is observed in the Hdeg annealed oxides