Design and experimental verification of passive microwave components and circuits using a 0.18 /spl mu/m FDSOI process

Integrated passive components and circuits were designed, fabricated and tested on MIT Lincoln Laboratory's fully depleted silicon on insulator (FDSOI) technology. Design, modeling, and experimental testing of the interdigitated capacitors (IDCs), and lumped element bandpass filters (BPFs) are reported in this paper. The IDCs were tested up to 10 GHz. The measured IDCs showed good agreement with the modeled IDC. A bandpass filter MMIC was designed for a center frequency of 3.275 GHz and a bandwidth of 1 GHz. The insertion loss of the BPFs ranges from 8.9 dB to 10 dB at the center frequency of the passband. The higher insertion loss of the filter was attributed to lower Q of the LC resonators at S-band frequencies. As far as the authors know, this is the first study on lumped element bandpass filters based on CMOS FDSOI technology.