2-dimensional InGaAs/InP photodiode arrays on semi-insulating InP for laser radar and dark current characteristics

Two dimensional InGaAs/InP PIN photodiode array on semi-insulating InP has been developed for the image sensing of the eye safe laser radar in the 1.55 /spl mu/m wavelength range of the spectrum with high bandwidth and large area. The fabrication and dark current characteristics are discussed. Dark current characteristic is limited by the diffusion and generation-recombination in the 2 dimensional InGaAs/InP photodiode arrays on semi-insulating InP. The static dark current of the InGaAs/InP PIN photodiode arrays increases as proportional to the number of the pixels in the array.