A broadband medium power amplifier for millimeter-wave applications

A power amplifier using 0.15-/spl mu/m GaAs pHEMT technology is presented. This amplifier combines two conventional distributed amplifiers to achieve wide bandwidth, high gain and moderate output power. The measured small signal gain is 15.3 /spl plusmn/ 1 dB from 4 to 37 GHz with a chip size of 2 /spl times/ 1.5 mm/sup 2/. The output saturated power is 20.6-23.3 dBm from 4 to 37 GHz. The wide bandwidth and large output power makes it useful in many microwave and millimeter wave applications, such as broadband amplifiers in microwave equipment, and ultra-wide-band signal amplification.