Modeling of nonlinear power amplifier with memory effects applied for 3G system

In this paper, the nonlinear modeling of power amplifier with remarkable memory effects is presented. The power amplifier was designed by using LDMOS, and was driven by one-carrier W-CDMA signal and four-carrier W-CDMA signal respectively. Two different models, V-vector Volterra model and MPMSD model, are extracted from the power amplifier and the performances on capturing memory effects of the power amplifier are compared. The simulation results show that the MPMSD model is more accurate and effective than the V-vector Volterra model.