Physics based modeling and simulation of hetero material asymmetric gate stack epi (HEMAGASE)-MOSFET

Two dimensional analytical modeling and simulation of a new device architecture-hetero material asymmetric gate stack epi (HEMAGASE) MOSFET is presented for short channel lengths. We have studied the various possible structures of asymmetric gate oxide stack MOSFET with heteromaterial gate and made a comparison between them. The model proposed is capable of modeling electrical characteristics like surface potential, electric field and threshold voltage. ATLAS, 2-D device simulator is used, over a wide range of parameters and bias conditions to validate the analytical results.