Dielectrophoretic integration of nanodevices with CMOS VLSI circuitry

We present a novel platform for the development and deployment of nanosensors in integrated systems. The nanosensor technology is based on cylindrical structures grown using porous membranes as templates. These nanostructures are manipulated using dielectrophoretic forces, thus allowing their individual assembly and characterization. This assembly also enables the development of "mixed-mode" integrated circuits that include readout, signal processing, and communications circuitry, as well as the requisite layout for the post-integrated-circuit assembly of the nanostructures. We report the results of assembly experiments performed on complementary metal-oxide-semiconductor (CMOS) circuitry designed using Freescale semiconductor's HiP6W low-voltage 0.18-/spl mu/m Si/SiGe BiCMOS process.