Semiconductor quantum-dot based wideband emitter for optical sensors

We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 mum wide) butt-connected to a broad-area photon absorber (50 mum wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20 degC) with wavelength peak at ~1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device