Performance Improvement in Tensile-Strained$hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As$Metamorphic HEMT

This paper proposes a
$hbox In_0.5hbox Al_0.5$
As/
$hbox In_xhbox Ga_1-xhbox As$break
/
$hbox In_0.5hbox Al_0.5hbox As$
$(x=0.3-0.5-0.3)$
metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.