Detection of CdS(Te) and ZnSe(Te) scintillation light with silicon photodiodes

Some scintillation characteristics of CdS(Te) have been investigated. The scintillation emission spectrum of CdS(Te) single crystals is situated in a band between 560 and 800 nm with, maximum at 640 nm. The light yield of this red emitting crystal on a microsecond time scale is rather large: approximately 1.7*10/sup 4/ photons per MeV of absorbed gamma -ray energy. The scintillation light can be efficiently detected with silicon photodiodes. Results are presented. Main decay time components of 270 ns and 3.0 mu s were measured. The scintillation mechanism and the application of the material are discussed. Some data regarding a similar system, ZnSe(Te), are presented.<
>