Comparison of X-ray GaAs and CdTe p-i-n detectors by a 3D FEM model

In this paper a 3D FEM model is used to simulate the temperature behaviour of X-ray GaAs and CdTe p-i-n detectors. The good accordance of the obtained values with the know experimental data confirms the general validity of the adopted model in simulating devices of any material, at any working temperature. Moreover the comparison shows that GaAs detectors having the same dimension than CdTe detectors and for the same energy source (
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Am with 60 KeV) exhibit the same efficiency at 243 K while, at room temperature (300 K) their behaviour is far better