Electrical transport in high-temperature region of nanowiring grown by focused-ion-beam chemical vapor deposition

In this paper, we investigated temperature dependence of resistance of nanowiring in the high temperature region (from room-temperature to 400/spl deg/C). The FIB system utilizing a beam of 30 KeV Ga ions, and computer pattern generator system that allowed us to control scanning direction and speed of the ion beam were applied to make nanowirings.