Short-channel pMOSTs in a high-resistivity silicon substrate. II. Noise performance

For pt.I, see ibid., vol.39, no.10, p.2268-77 (1992). The noise performance, important for the use of p-channel transistors on high-resistivity silicon in analog applications, is investigated. This is done for the two operation modes: bulk ( mod V/sub gs/ mod < mod V/sub T/ mod ) and surface ( mod V/sub gs/ mod > mod V/sub T/ mod ). For the studied transistors, both modes are characterized by a 1/f noise spectrum extending to frequencies of up to approximately=100 Hz, and followed by a white-noise spectrum, determined by the substrate resistance.<
>