A simple equation model for RF MOS FET

A simple equation RF MOS FET model using hyperbolic tangent functions and its parameter extraction technique have been demonstrated. Only twenty parameters are required without physical parameters depending on device structure. Submicron device can be easily characterized and the equivalent model can be understood briefly. The validity has been confirmed by characterizing a 0.23-mum RF power MOS FET. The model is useful especially for the RF analog circuit design engineers and education for the university students and beginners