Efficient non-quasi-static MOSFET model for both time-domain and frequency-domain analysis

A consistent non-quasi-static MOSFET model for time-domain and frequency-domain circuit simulation is developed. The model takes into account the time delay for carriers to form the channel, which is neglected in conventional quasi-static models. The model, as implemented into the surface-potential-based MOSFET model HiSIM, is verified to calculate correct Y-parameters in the frequency domain. The computational runtime cost of the model is comparable to a conventional quasi-static modeling approach