Emitter geometry scaling of RF noise in SiGe HBTs

This paper investigates the emitter geometry scaling of RF noise in SiGe HBTs based on noise measurements. The extracted intrinsic noise using noise de-embedding method is found to scale ideally with emitter area and is the major noise source. Non ideal scaling of noise parameters is found to be mainly from the non ideal scaling of base resistance. A recently proposed semi-empirical noise model is examined for its scaling ability