Enhanced fmax and Low Base Resistance in SiGe HBT with Nickel Silicidation

This electronic paper reports on our investigation of enhanced fmax and low base resistance of SiGe HBT, in which Ni silicidation is performed on the Si/SiGe/Si base instead of Ti silicidation. The properties of nickel silicidation on Si/SiGe/Si layer are compared with those of Ti silicidation. It is found that Ni silicidation affects the base resistance (RB) of SiGe HBT, where RB is a summation of the intrinsic base resistance (R
_INB
) and the extrinsic base resistance (R
_EXB
). Comparing to the Ti silicided SiGe HBT, it shows about 10% enhanced fmax up to 41 GHz and above 70% reduced R
_EXB
of 9 Omega/square for Ni silicided SiGe HBT