Characterization and modeling of 4H-SiC power BJTs

4H-SiC power BJTs are investigated by experimental measurements and numerical simulations. A number of phenomena that are different from Si BJT are investigated including the Vce offset voltage and collector conductivity modulation. The current gain as a function of collector current density has also been studied. Simulation shows the emitter and base junction interface states plays a key role in limiting the current gain at high current densities