High resolution mask metrology in photo lithography: impact of rigorous effects

In lithography assessment of the mask performance and the printability of mask defects is an important issue. For that rigorous effects have to be included into the mask metrology. A measurement of the mask topography alone would yield significant errors. Furthermore, rigorous effects can be used for increased accuracy in high resolution optical metrology in general. Based on systematic simulations with MicroSim using the rigorous coupled wave analysis, we have developed a classification scheme of the mask induced polarization effects in optical lithography.