Fabrication of transparent p-n junction composed of heteroepitaxially grown p-Li/sub 0.15/Ni/sub 0.85/O and n-ZnO films for UV-detector applications

In this article, we demonstrate the ability to create heterojunctions of p-type Li/sub 0.15/Ni/sub 0.85/O (LNO) and n-type ZnO films deposited by pulsed laser deposition (PLD) on sapphire and MgO substrate, using Pt contacts on the LNO film, which represents a combination of transparent conducting oxides (TCOs) with simple crystal structures to fabricate transparent p-n junction. This looks to be a promising approach for realizing low-cost transparent junctions.