Efficient 1.06 and 1.34-/spl mu/m laser emission of highly-doped Nd:YAG under 885-nm diode pumping into the emitting level

Based on the recent development of diode lasers covering the spectral range from 800 to 1000 nm, we report in this work efficient laser emission at 1.06 and 1.34-/spl mu/m in highly-doped Nd:YAG under diode-pumping into the emitting level. In conclusion, the results of this work demonstrate that diode laser pumping into the emitting level of concentrated Nd laser materials is a solution for construction of efficient micro-lasers and for scaling to high power.