A measurement test-set for characterisation of high power LDMOS transistors including memory effects

The paper presents a test-set enabling precise measurement of all signal components generated by a modulated stimulus, hence allowing for device characterisations relevant for communication systems. The presented test-set utilises two different types of coupler networks to detect the fundamental and harmonic signal components, and the IF signal components, respectively. Furthermore, the test-set is capable of handling power levels above 100 W making it applicable to devices relevant for the basestation market.