200mm germanium-on-insulator (GeOI) by Smart Cut/spl trade/ technology and recent GeOI pMOSFETs achievements

We present our recent achievements on 200mm GeOI formation from bulk Ge wafers and the resulting device characteristics. Pseudo-MOS measurements were done at Soitec, and Ge MOSFET fabrication was done at LETI and IMEC from epitaxial and bulk Ge starting materials, respectively.