A New Quasi Ballistic Model for Strained MOSFET.

An analytical model for the nano-MOSFET based on the determination of ballistic and backscattering probabilities along the channel is developed. This model, validated by analysis of transport in device using scattering spectroscopy, has been used to model the strained MOSFET by evaluating the appropriate scattering relaxation times and the carrier distribution. Finally, it has been used to determine the impact of CESL on the I
ON
enhancement.