Simulation of Spin-polarized Transport in GaAs/GaAIAs Quantum Well Considering Intersubband Scattering by the Monte Carlo Method

Using the Monte Carlo method, we simulated the electrons' spin-polarized transport in GaAs/GaAIAs quantum well in the one-subband and three-subband approximation. The spin dephasing rate is larger for quantum well in the three-subband approximation than that in the one-subband approximation due to the intersubband scattering. The influences of in-channel driving electric field, lattice temperature and channel width on the spin dynamics are compared between the three-subband and the one-subband approximation model. At 300K, the spin vector relaxes slower for larger applied in-channel driving electric field. For lower lattice temperature, spin dephases slower. Under certain driving electric field and lattice temperature, larger channel width causes faster spin dephasing. These results are essential for design and fabrication of spintronic devices.