Compact Modeling of Source-Side Injection Programming for 9Onm-Node AG-AND Flash Memory

A compact model of source-side injection programming for AG-AND flash memory is presented. The lucky-electron model is used to formulate the hot electron injection current for programming. The lateral electric field is estimated using the pseudo-two-dimensional model considering the offset length between the assist-gate and the floating-gate. The proposed model is verified with device simulation and measurement results of 90nm-node AG-AND flash memory.