Highly scalable ballistic injection AND-type (BiAND) flash memory

An AND-type split-gate Flash memory cell with a trench select gate and a buried n/sup +/ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5F/sup 2/. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.